English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M95M01-DFDW6TPSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP |
|
AT21CS11-SSH10-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
|
S25FL128SDSMFBG10Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C2663KV18-550BZXCRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
IS46R16320D-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C1381C-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
CAV24C512WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
GS8182Q36BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C1381D-100AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL01GS11DHIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
NV24C64MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8UDFN |
|
25LC320A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
70T3319S133BFI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
