类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1381C-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
CAV24C512WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
GS8182Q36BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C1381D-100AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL01GS11DHIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
NV24C64MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8UDFN |
|
25LC320A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
70T3319S133BFI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
24AA044T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8MSOP |
|
CY7C168A-35PCRochester Electronics |
STANDARD SRAM, 4KX4, 35NS, CMOS |
|
M24C04-DRMF3TG/KSTMicroelectronics |
IC EEPROM 4KBIT I2C 1MHZ 8MLP |
|
93LC56AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
71V124SA10YRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |