English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1245Y-FIRRochester Electronics |
DS1245 3.3V 1024K NV SRAM |
|
AS4C512M8D3LC-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
71V124SA10TYRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT41K1G8RKB-107:PMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
CY7C1383F-133BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S29GL01GT12DHM023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
71V016SA12BFGRochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
M24C04-WMN6PSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
IS46LR32160B-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1069GN30-10BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C1474V33-200BGCRochester Electronics |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
24LC014HT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
BR24T1MFJ-3AME2ROHM Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8SOPJ |
