English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP-J |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1041V33-20VCTRochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
25AA02E48-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
CY7C2565KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
DS2430AP+Maxim Integrated |
IC EEPROM 256B 1-WIRE 6TSOC |
|
CY7C1548KV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
EM68C16CWQG-25IHEtron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
CY14B101NA-ZS45XITCypress Semiconductor |
IC NVSRAM 1MBIT PAR 44TSOP II |
|
MT29AZ5A3CHHWD-18AIT.84FMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
AS4C16M16SA-7BCNAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
AT25SF641B-MHB-TAdesto Technologies |
IC FLASH 64MBIT SPI/QUAD 8UDFN |
|
MB85RS2MLYPNF-G-AWERE2Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8SOP |
|
AT24HC04B-PURoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
IS62WV10248EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
