English
简体中文
IC SRAM 4MBIT PARALLEL 48TSOP I
DUAL-PORT SRAM, 64KX36, 4.4NS PB
IC SRAM 36MBIT PARALLEL 165FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2.6 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25PE16-MHF-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
24LC16BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TDFN |
|
THGAMRG8T13BAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 256GBIT EMMC 153FBGA |
|
CY7C1041GN30-10VXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
93LC56AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
W632GG6NB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
RM25C512C-LMAI-TAdesto Technologies |
IC CBRAM 512KBIT SPI 20MHZ 8UDFN |
|
DS1265AB-70Rochester Electronics |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
CY14B101L-SZ45XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
|
IS62WV6416DBLL-45BLIRochester Electronics |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
24VL024T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS43R16320F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
0418A86LQKA-7Rochester Electronics |
8MBIT (512K X 18) SRAM |