English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S-93L46AD0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY62177EV30LL-55ZXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
24LC512T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
UPD46364182BF1-E33-EQ1-ARochester Electronics |
DDR SRAM, 2MX18, 0.45NS |
|
CY7C1312SV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT28LV64T13A-25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
W9725G8KB-18Winbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
S25FS128SAGNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
71V67603S133PFIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70V7319S133BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
SST26VF016B-104I/SMRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
MT48LC8M16A2P-6A XIT:L TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
FM28V202A-TGCypress Semiconductor |
IC FRAM 2MBIT PARALLEL 44TSOP II |
