English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 350 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-WBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FS128SAGNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
71V67603S133PFIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70V7319S133BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
SST26VF016B-104I/SMRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
MT48LC8M16A2P-6A XIT:L TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
FM28V202A-TGCypress Semiconductor |
IC FRAM 2MBIT PARALLEL 44TSOP II |
|
N25S818HAS21ISanyo Semiconductor/ON Semiconductor |
IC SRAM 256KBIT SPI 16MHZ 8SOIC |
|
MT41K64M16TW-107 AUT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MX25R1635FZNIH0Macronix |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
CY7C1423KV18-333BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1325A-117ACRochester Electronics |
STANDARD SRAM, 256KX18 |
|
NM93C66ANRochester Electronics |
EEPROM, 256X16, SERIAL PDIP8 |
|
S29GL064S80TFB043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
