类型 | 描述 |
---|---|
系列: | GL-N |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1418BV18-167BZCRochester Electronics |
DDR SRAM, 2MX18, 0.5NS, CMOS, PB |
|
CY7C1425KV18-300BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS21ES04G-JQLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32GBIT EMMC 100LFBGA |
|
IS46DR16640B-3DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
24LC32AFT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
25LC256-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
MR256A08BCYS35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |
|
24AA32AFT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
BR24G08FVT-3GE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOPB |
|
W9725G8KB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
71256SA20YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W948D2FBJX5EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
93LC66B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |