FUSE BRD MNT 3.15A 300VAC RADIAL
IC FLASH 4MBIT SPI 40MHZ 8UDFN
类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V35761S200BGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
24AA025E48T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
MX25U25645GMI00Macronix |
IC FLASH 256MBIT SPI/QUAD 16SOP |
|
AS7C1024B-12TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
24LC512-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
UPD44325092BF5-E40-FQ1Rochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
M5M51008DVP-70HISTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
CY14V101LA-BA45XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
IS42SM16800H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
W632GG8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IS42S32800J-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS45S16160G-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT28HC256-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |