类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL032N90FFI042Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S29GL128S13FAEV13Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
BR24T16FVT-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
GD25D05CTIGGigaDevice |
IC FLASH 512KBIT SPI/DUAL 8SOP |
|
IS43R16160F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY7C1381KVE33-133AXITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
7142LA35CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
BR24G02FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8SOPJ |
|
S711E20E0VFUE3Rochester Electronics |
8-BIT MCU, 20K EPROM, 768 RAM |
|
S29GL064N90DAI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W9825G2JB-6 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
GS8256436GD-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
N64S830HAS22ISanyo Semiconductor/ON Semiconductor |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |