类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.15V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC66BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
SST25VF020B-80-4C-QAERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8WSON |
|
IS43R16320D-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
93LC56/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
CY15E004J-SXACypress Semiconductor |
IC FRAM 4KBIT I2C 1MHZ 8SOIC |
|
MT47H256M8EB-25E:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
71T75802S150BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT25512Y7-YH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8UDFN |
|
BR93G56FVJ-3BGTE2ROHM Semiconductor |
IC EEPROM 2K SPI 3MHZ 8TSSOP |
|
UPD48288218AF1-E24-DW1-ARochester Electronics |
DDR DRAM, 16MX18 |
|
W947D2HBJX5E TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
M24C08-DRDW8TP/KSTMicroelectronics |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
24AA128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |