类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 4ms |
访问时间: | 450 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IS64WV5128EDBLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M24256-BRDW6PSTMicroelectronics |
IC EEPROM 256KBIT I2C 8TSSOP |
|
CY7C1462KV25-200AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
IS21ES64G-JCLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512GBIT EMMC 153VFBGA |
|
IS42S16320F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
71V65803S100BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25AA080/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8SOIC |
|
23LC512-E/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8SOIC |
|
GD25VQ20CSIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
TMS55160-60DGHRochester Electronics |
VIDEO DRAM, 256KX16, 60NS PDSO64 |
|
S25FL128SAGBHIY00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
GD25LD20CUIGRGigaDevice |
IC FLSH 2MBIT SPI/DUAL I/O 8USON |