English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7S1061G18-15ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
70T3519S166BCIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
24LC32AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
DS1220AB-100+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
AT24C1024BW-SH-BRochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
GS8256436GD-200IVGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
70V658S12BCIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
MX25L1633EM2I-10GMacronix |
IC FLASH 16MBIT SPI 104MHZ 8SOP |
|
MT48LC16M16A2B4-6A AAT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
IS42S83200G-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
AS7C34096A-20TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
BR24G32FV-3AGTE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8SSOPB |
|
CY7C1351B-100AIRochester Electronics |
128KX36 3.3V NOBL SYNC-FT SRAM ( |
