类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.15V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24CW1280T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C SOT23-5 |
|
34AA02-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
93C46BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
RM25C128C-LTAI-BAdesto Technologies |
IC CBRAM 128KBIT SPI 8TSSOP |
|
ACE1101BENRochester Electronics |
8-BIT, EEPROM, ACE1101 CPU, 1MHZ |
|
7164L45DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
S25FL128LDPMFV001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT58L64L18PT-7.5Rochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
RM24C32C-LTAI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8TSSOP |
|
W25M512JVCIQWinbond Electronics Corporation |
IC FLASH 512MBIT SPI 24TFBGA |
|
S25FL128SAGBHI213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS42SM16400M-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
AT28HC256F-90FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |