类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S27KL0641DABHA033Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
S34MS02G200TFI000Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
CY7C1414TV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70T653MS12BCI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
S29GL128S10DHIV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
BR24T256F-WE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 8SOP |
|
24LC128-I/PRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DIP |
|
S-24CS04AFT-TB-GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT I2C 8TSSOP |
|
71256L25DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
CY7C09179V-6AXCRochester Electronics |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
24LC32A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
CY7C1426JV18-300BZCESRochester Electronics |
SRAM 1.8V 36M-BIT 4M X 9-BIT |
|
7028L15PFGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |