English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 8 x 2) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25XE081D-UUN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8WLCSP |
|
IS43TR82560DL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
FM24C08ULZEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
IS64LF204818B-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
MT46H16M32LFBQ-5 AAT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
S29GL064N90TFA043Rochester Electronics |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY7C1370KV33-167BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
25LC160DT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
AS6C62256-55SCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOP |
|
AT24C32E-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8UDFN |
|
IS42S16320F-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
SST25VF040B-50-4I-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
S29WS256P0LBFW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
