English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | RAM |
| 技术: | MRAM (Magnetoresistive RAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 40 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VDFN Exposed Pad |
| 供应商设备包: | 8-DFN-EP, Small Flag (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT25640HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 10MHZ 8UDFN |
|
AT25DF041B-MHNHR-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
MT46V16M16TG-5B:MTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
MX25L1026EM1I-10GMacronix |
IC FLASH 1MBIT SPI 104MHZ 8SOP |
|
GS81282Z36GB-200IVGSI Technology |
IC SRAM 144MBIT PAR 119FPBGA |
|
IS43LR16320C-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MX29F200CBTI-90GMacronix |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
S29GL512N10FFA010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IS66WVC4M16ECLL-7010BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
AS4C8M32SA-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AS4C512M16D3L-12BINTRAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
25AA640AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
CY7C1318CV18-278BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
