类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1318CV18-278BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS43QR16256B-083RBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96BGA |
|
71V321L25PFGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
24AA256-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
MT29F4G08ABADAWP-IT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
CY7C1525KV18-250BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
25LC640A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
IS43LR16320C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY14B104LA-BA45XIRochester Electronics |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
AS4C2M32D1A-5BCNAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144LFBGA |
|
R1LV5256ESP-7SR#B0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
AS4C64M8D3-12BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
S-25C512A0I-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT SPI 10MHZ 8SOP |