English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA256-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
MT29F4G08ABADAWP-IT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
CY7C1525KV18-250BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
25LC640A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
IS43LR16320C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY14B104LA-BA45XIRochester Electronics |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
AS4C2M32D1A-5BCNAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144LFBGA |
|
R1LV5256ESP-7SR#B0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
AS4C64M8D3-12BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
S-25C512A0I-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT SPI 10MHZ 8SOP |
|
IS43LR32100D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
SST39VF402C-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
71V65803S150PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
