类型 | 描述 |
---|---|
系列: | HyperFlash™ KL |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 96 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62157G30-45BVXITCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
IS42S32800J-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
71V016SA10BFRochester Electronics |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
IS42SM32200M-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W25Q16JWSNIMWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT25SF128A-SHB-TAdesto Technologies |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MX25L12836EZNI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 8WSON |
|
W9725G6KB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 84WBGA |
|
24C01C-E/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8DFN |
|
AT28C010-12DM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32CDIP |
|
CY7C1413TV18-167BZCRochester Electronics |
SYNC RAM |
|
24FC02T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
IS46R16160D-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |