类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 120 MHz |
写周期时间 - 字,页: | 2.4ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F384G08EBHBBJ4-3R:BMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
|
AT28C010E-15JURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
IS46R16160F-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C1474V33-167BGCRochester Electronics |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
71V424L12YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
71V65803S150BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
W29GL512SH9T TRWinbond Electronics Corporation |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS64LF12832A-7.5TQLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS34MW04G084-TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
93C66BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
CY7C1414BV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S34ML02G100TFV003Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
24LC00/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |