类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT93C66A-SQ27U2Rochester Electronics |
AT93C66 - EEPROM, 256X16, SERIAL |
|
CY7C1320BV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1357S-100AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1061G-10BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
BR93G56F-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8SOP |
|
24LC21A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CY7C1339A-66ACRochester Electronics |
128K X 32 SYNCHRONOUS BURST SRAM |
|
CY7C1399B-10VCRochester Electronics |
CACHE SRAM, 32KX8, 10NS PDSO28 |
|
IS62WV1288FBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
043641QLAD-5Rochester Electronics |
256KX18 SRAM |
|
71V424S15YGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
BR24G01NUX-3ATTRROHM Semiconductor |
IC EEPROM 1K I2C VSON008X2030 |
|
IS43LR16640A-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |