类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1414KV18-300BZXCCypress Semiconductor |
NO WARRANTY |
|
CY7C09199V-7ACRochester Electronics |
DUAL-PORT SRAM, 128KX9, 18NS |
|
GS81302DT38AGD-633IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
AS4C16M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
93LC56BX/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT46V64M8CV-5B IT:JAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CAT28F001HI-12TRochester Electronics |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
CY7C1041G30-10ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
8103610SARochester Electronics |
8103610 - OT PLD, 30NS |
|
BR24C01-RDS6TPROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
11AA02UIDT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
AS7C31025B-12JINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70V7319S133BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |