English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP-J |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61QDP2B22M18A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CY7C1325B-100BCRochester Electronics |
256K X 18 SYNCHRONOUS CACHE RAM |
|
MT28EW256ABA1LPC-0SIT TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
S29GL032N11FFIS10Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S25FL256LAGBHI033Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71T016SA15PHRochester Electronics |
2.5V SRAM 1 MEG (64K X 16-BIT) |
|
93LC46BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
AS4C8M16D1A-5TINAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
AS4C512M8D3A-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
GD25WD40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
CAT25160YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOP |
|
AT24C04C-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
71256SA20YGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
