类型 | 描述 |
---|---|
系列: | SST26 SQI® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 1.5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WDFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61VVF409618B-7.5TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C293A-25PCRochester Electronics |
OTP ROM, 2KX8, 25NS |
|
FM24V02A-GCypress Semiconductor |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC |
|
CAT24C128YIGT3JNRochester Electronics |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IS61WV6416EEBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
24AA64-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
MT29F512G08CMCEBJ4-37ITR:EMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
24FC16-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
7164S25YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY7C1548KV18-400BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT24C02LIRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
AS4C256M16D3B-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
TC58NVG2S0HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 67VFBGA |