English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (MLC) |
| 内存大小: | 512Gb (64G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 267 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 132-VBGA |
| 供应商设备包: | 132-VBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24FC16-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
7164S25YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY7C1548KV18-400BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT24C02LIRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
AS4C256M16D3B-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
TC58NVG2S0HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 67VFBGA |
|
BRCA016GWZ-WE2ROHM Semiconductor |
IC EEPROM 16K I2C UCSP30L1 |
|
25AA256T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
AT28C256E-15TURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
S25FL256SAGNFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
24LC024T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
93C66C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
DS1230WP-100+Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
