







DIODE, HIGH EFFICIENT
TERM BLK 10POS 45DEG 3.81MM PCB
IC DRAM 512MBIT PARALLEL 90VFBGA
BOX FIBERGLASS GRY 15.73"X13.85"
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPSDR |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-VFBGA |
| 供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CY7C1370B-150ACRochester Electronics |
ZBT SRAM, 512KX36, 3.8NS |
|
|
S25FL256SDPMFIG10Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
|
CY7C1041GN-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
|
CY62157CV18LL-55BAIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
|
AS6C6416-55TINAlliance Memory, Inc. |
IC SRAM 64MBIT PARALLEL 48TSOP I |
|
|
S29GL01GT12DHVV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
25LC640AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
|
70V7599S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
DS1245AB-120+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
|
BR24A01AF-WME2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOP |
|
|
IS46TR16640ED-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
|
71V3577S75BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
|
93C86CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DFN |