English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71T75602S166BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
R1LV0408DSB-7LR#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
IS64WV5128BLL-10CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V7319S166BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CY7C1424KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C0851V-133AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 176TQFP |
|
S29GL512S10DHSS23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
AS6C2008-55TINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
FM93C46TM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
BR24H64FVM-5ACTRROHM Semiconductor |
125 OPERATION IC BUS EEPROM FOR |
|
UPD431000AGZ-70LL-KJH-E3-ARochester Electronics |
SRAM 5V 1M-BIT (128K X 8) |
|
IS61C64AL-10JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
S29AS016J70BFI040Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
