English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Mb (1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM93C46ALEM8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
71V65603S100BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS43LD32128A-25BPLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 168VFBGA |
|
IS46DR16320C-3DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
SST39LF402C-55-4C-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
S25FL512SDSMFV013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
FM24C03UENRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
THGBMJG6C1LBAU7Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT EMMC 153FBGA |
|
S29GL512T10FHI033Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IS61QDP2B22M36A1-333B4LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
24LC32AT-I/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |
|
AT28HC256-90DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
SST39VF400A-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
