English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M95512-DFDW6TPSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
24AA52T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
X28C512JZ-12Rochester Electronics |
EEPROM, 64KX8, 5V, PARALLEL |
|
IS46DR16320D-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
AT24C02D-PUMRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
MT29RZ4B2DZZHHWD-18I.84F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
BR24T128FJ-WE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SOPJ |
|
NM93C46LM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
AT28HC64B-90TU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
CAT93C46RYI-GRochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8TSSOP |
|
R1LV0216BSB-5SI#S1Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
W25Q16JWSSIM TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
SST26VF064B-104I/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |
