English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-TFBGA |
| 供应商设备包: | 36-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM25C128DS-LTAI-TAdesto Technologies |
IC CBRAM 128KBIT SPI 8TSSOP |
|
CY7C199N-15ZXCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
CY7C1018CV33-12VXITRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1380C-167BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
FM24C32UFLEM8Rochester Electronics |
IC EEPROM 32KBIT I2C 8SOIC |
|
BR25020N-10SU-1.8ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
HM1-6514S-9Rochester Electronics |
1024 X 4 CMOS SRAM |
|
71V432S6PFIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
25LC640AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
S29GL256P90TFIR23Rochester Electronics |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT25DF011-MAHNGU-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8UDFN |
|
S29GL032N11FFIV10Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
25LC320-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8SOIC |
