类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SM662GXB BDS TTC29Silicon Motion |
FERRI EMMC 32GB 3D TLC (100 BALL |
|
25C160T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
S29GL512T10TFI040Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
FM93C56LMT8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
11AA080-I/TORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE TO92-3 |
|
MT53D512M32D2DS-053 WT:D TRMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
93C46AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
PC28F320J3F75AFlip Electronics |
IC FLASH 32MBIT PAR 64EASYBGA |
|
TH58BYG3S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT PARALLEL 63TFBGA |
|
25LC160DT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
R1QAA7218ABB-20IA0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
5962-9089904MYARochester Electronics |
FLASH, 128KX8, 120NS, CQCC32 |
|
71256SA20PZRochester Electronics |
SRAM 256K (32K X 8-BIT) |