类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM - FP |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 25 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 50-TSOP (0.400", 10.16mm Width), 44 Leads |
供应商设备包: | 50/44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC014H-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
|
CY14B101K-SP45XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
25AA320AXT-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT 10MHZ 8TSSOP |
|
CY2545C001TRochester Electronics |
MISC PRODUCTS |
|
AS1C4M16PL-70BINAlliance Memory, Inc. |
IC PSRAM 64MBIT PARALLEL 49FBGA |
|
AT25DL161-SSHN-BAdesto Technologies |
IC FLASH 16MBIT SPI 100MHZ 8SOIC |
|
M24128-DRDW8TP/KSTMicroelectronics |
IC EEPROM 128KBIT I2C 8TSSOP |
|
S25FL512SAGBHVA13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
IS43DR16320C-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CY7C1347G-166AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62148DV30L-70BVIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
CY7C2263KV18-550BZXCCypress Semiconductor |
NO WARRANTY |
|
BR24G128FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8TSSOP |