English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT53E128M32D2DS-053 AUT:A TRMicron Technology |
IC DRAM 4GBIT 1.866GHZ 200WFBGA |
|
71V3559S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1359A-150ACRochester Electronics |
CACHE TAG SRAM, 256KX18, 3.8NS |
|
MX60LF8G18AC-TIMacronix |
IC FLASH 8GBIT PARALLEL 48TSOP |
|
UPD44645092AF5-E40-FQ1-ARochester Electronics |
STANDARD SRAM, 8MX9, 0.45NS |
|
IS62LV256AL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
23A512-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
IS42S16160J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL256S10DHAV23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY7C1460AV33-167BZCRochester Electronics |
ZBT SRAM, 1MX36, 3.4NS, CMOS, PB |
|
CY7C1018BV33-12VCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
IS42RM32160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
93AA66AXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
