English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-LCC (J-Lead) |
| 供应商设备包: | 44-PLCC (16.6x16.6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC56AT/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
RMLV0408EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C09349AV-12ACRochester Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
71V432S7PFGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAT24FC64WI-TE13Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
IS42S16160J-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
FM93C06EM8XRochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
IS25LP512M-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
MT40A256M16LY-062E:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S-24CS16A0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY62136CV30LL-70BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
71V65903S80BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24LC64T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
