English
简体中文
CAP CER 100PF 63V C0G/NP0 2220
IC SRAM 72MBIT PARALLEL 165FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II+ |
| 内存大小: | 72Mb (2M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 450 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT93C86VI-TE13Rochester Electronics |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
CY7C028-12AXCRochester Electronics |
DUAL-PORT SRAM, 64KX16, 12NS |
|
24LC515-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
S25FL128SDSBHA213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
24VL024/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
AS4C4M32D1A-5BCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 144LFBGA |
|
S25FL256SAGBHVA03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
93AA46C-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
|
70T659S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S29GL512S10FHI013Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
|
IS42S16320F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
24FC256-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
BU9844GUL-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C VCSP50L1 |