IC SRAM 18MBIT PARALLEL 100TQFP
BIT D'VERSIBIT .750X.250X36.00"
类型 | 描述 |
---|---|
系列: | ZBT® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous, ZBT |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 2.375V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1462BV25-250AXCRochester Electronics |
ZBT SRAM, 2MX18, 2.6NS PQFP100 |
|
71V632S5PFGI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
NDB16PFC-4DITInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
CY7C026A-15AXIRochester Electronics |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
CAT93C86XI-T2Rochester Electronics |
CAT93C86 - 16-KBIT MICROWIRE SER |
|
DS1249W-100#Rochester Electronics |
NON-VOLATILE SRAM MODULE, 256KX8 |
|
S29GL01GS10FHSS23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C199-20ZCRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
11AA020-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
|
IS62C256AL-25ULI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOP |
|
MR2A16AMA35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 48FBGA |
|
IS42VM32160D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
25LC080B-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |