类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25S830HAS22ISanyo Semiconductor/ON Semiconductor |
IC SRAM 256KBIT SPI 20MHZ 8SOIC |
|
CY7C1020B-12ZXCRochester Electronics |
IC SRAM 512KBIT PAR 44TSOP II |
|
71V30L25TFG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MR0A16AMA35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
MR2A16AYS35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 44TSOP2 |
|
W25Q128JVCIMWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
24AA01H-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
GS82582QT37GE-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
6116SA25SOGRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
W631GU6MB11IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS64WV12816DBLL-12CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1339-166ACRochester Electronics |
CACHE SRAM, 128KX32, 3.5NS |
|
93LC46X-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |