类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA128T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DFN |
|
AT28C256-15DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
IS42S16160G-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
71V416L15BEGRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1262XV18-366BZXCRochester Electronics |
QDR SRAM, 2MX18, 0.45NS PBGA165 |
|
CY7C09349AV-9AXCFlip Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
93LC56BX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
IS61LP6432A-133TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
M5M5W816WG-55HI#BTRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
IS61LV256AL-10JLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY62128ELL-45ZAXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
71V3556SA166BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S25FL116K0XMFA013Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |