类型 | 描述 |
---|---|
系列: | GL-P |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA040AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
MR25H10MDCEverspin Technologies, Inc. |
IC RAM 1MBIT SPI 40MHZ 8DFN |
|
71T75702S75BGIRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
|
W9464G6KH-5Winbond Electronics Corporation |
IC DRAM 64MBIT PAR 66TSOP II |
|
23A1024T-I/SNRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD I/O 8SOIC |
|
71P74604S200BQRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
DS1245W-100+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
NM24C03M8XRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
11AA040-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
GS81302D20AGD-633IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
71V416L15YRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
71V424S15PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43TR16256A-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |