类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 50µs, 2.4ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2.1V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-XFDFN Exposed Pad |
供应商设备包: | 8-USON (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT55L128L32F1T-10Rochester Electronics |
ZBT SRAM, 128KX32, 7.5NS PQFP100 |
|
S34ML08G101BHI000Rochester Electronics |
IC FLASH 8GBIT PARALLEL 63BGA |
|
CY7C1270KV18-550BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY62146G30-45ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43TR85120A-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
24FC01T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
W25X40CLSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
CY7C09289V-9ACRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
R1QDA3636CBB-19IB0Rochester Electronics |
STANDARD SRAM, 1MX36, 0.45NS |
|
IS43R83200F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C038V-20AXIFlip Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
S29GL128S90TFI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
NM24C02ENRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |