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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43R83200F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
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IC SRAM 1.152MBIT PAR 100TQFP |
|
S29GL128S90TFI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
NM24C02ENRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
25AA640AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
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IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS7C1024B-20TJINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
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M24C08-RMN6TPSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8SO |
|
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IC DRAM 64MBIT PARALLEL 54TFBGA |
|
S29GL256S11FHIV20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
TH58NVG3S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
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CY7C1315KV18-250BZCCypress Semiconductor |
NO WARRANTY |
|
FM93C66LM8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
