类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V424L15PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62126DV30L-55BVXERochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
IS42S32800G-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT24C04D-PUMRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
CY62138FV30LL-45ZAXARochester Electronics |
STANDARD SRAM, 256KX8, 45NS PDSO |
|
CAT25020LIRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
IS62WV51216EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
FM24C09ULZEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
MT40A1G8WE-083E AIT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
MT58L256L18F1T-10ITRochester Electronics |
CACHE SRAM 256KX18 10NS PQFP100 |
|
71V65703S80BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
70121L25JG8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
AT25080AN-10SQ-2.7Rochester Electronics |
EEPROM, 1KX8, SERIAL, CMOS |