类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 1Gb (32M x 32) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 90-VFBGA |
供应商设备包: | 90-FBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR93G46FJ-3GTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8SOPJ |
|
70V658S10DRGRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
CAV25080YE-GT3Rochester Electronics |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |
|
25LC080BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CY7C131-55NXIRochester Electronics |
IC SRAM 8KBIT PARALLEL 52PQFP |
|
W25Q16JVZPIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
TC58BVG0S3HTAI0Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
CY62167DV30LL-55BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
FM27C512V150Rochester Electronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
34AA04-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
IS42SM16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1069GN30-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AT28C256E-15DM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |