English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 2ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V3556SA150BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
TH58NYG2S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63BGA |
|
MT29F4G08ABAFAWP-IT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
CY7C1061GE-10BV1XICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
93LC76C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
MT29F2G08ABAGAWP-AIT:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
8413203RARochester Electronics |
16K X 1 ASYNCHRONOUS CMOS SRAM |
|
CY7C187-25PXCRochester Electronics |
STANDARD SRAM, 64KX1, 25NS |
|
SST39VF3201-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
MX29GL640EHT2I-70GMacronix |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
IS42RM32800E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
SST26VF064BT-104I/MNRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8WDFN |
|
S25FL128SAGMFIG11Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
