类型 | 描述 |
---|---|
系列: | SYNCBURST™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous |
内存大小: | 8Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NLF25618A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS45S16320F-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
S29GL01GT10TFI020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MT47H256M8EB-25E:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
71V3577S80BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AS4C1G8MD3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S25FL128SAGBHI310Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
CY62146GN30-45BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
S29GL512T10TFI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CY7C1346F-166ACRochester Electronics |
CACHE SRAM, 64KX36, 3.5NS |
|
BR24T02F-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
|
24CW1280T-I/CS1668Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 4CSP |
|
NDS36PT5-20ETInsignis Technology Corporation |
IC DRAM 256MBIT PAR 54TSOP II |