类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
6116LA20SOGIRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
AT25512-TH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS42S32800G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
MX25U2033EZUI-12GMacronix |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |
|
AT28C256E-20DM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
SST25WF020AT-40I/MFRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 40MHZ 8WDFN |
|
BR24T32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
IS42SM32400H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
24LC01BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S29GL01GP11FFSS80Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
S29GL256N90FFAR22Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AS4C16M16D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
R1LV0208BSA-5SI#B1Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 32STSOP |