类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | 3.5ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WDFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24T32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
IS42SM32400H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
24LC01BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S29GL01GP11FFSS80Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
S29GL256N90FFAR22Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AS4C16M16D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
R1LV0208BSA-5SI#B1Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 32STSOP |
|
25LC080A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
W987D6HBGX6IWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
M95160-RMN6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
|
GS82582DT19GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
IS43R16800E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
24AA08T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DFN |