类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-VFBGA (8x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95160-RMN6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
|
GS82582DT19GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
IS43R16800E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
24AA08T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DFN |
|
AS6C62256-55STINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28STSOP |
|
IS49RL18320-093BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
MTFC8GAMALBH-AATMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
S25FL256LDPMFB003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71256L35DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
93LC46B-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
CAT24M01YI-GT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8TSSOP |
|
25C320-E/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
70V7319S200BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |