English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | 6.7ns |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RMLV0408EGSA-4S2#AA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
24LC01BT/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
IS43LD32640B-25BPLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
W947D6HBHX6EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 60VFBGA |
|
AS7C34098A-10BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY7C1353B-66ACRochester Electronics |
ZBT SRAM, 256KX18, 11NS |
|
24LC08B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
IS61NLP102418B-250B3L-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S29GL128P11FFIV22Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
HM1-6518B-9Rochester Electronics |
1024 X 1 CMOS RAM |
|
S25FL032P0XNFV000Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
S29GL512S11FAIV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
S25FL132K0XNFI013Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8WSON |
